鈥?/div>
Controlled and Uniform Tuning Ratio
3
MMBV3102LT1
22 pF(Nominal) 30Volts
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE
1
ANODE
1
2
CASE 318鈥?8, STYLE
8
SOT鈥?23 (TO鈥?36AB)
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Device Dissipation @T
A
= 25擄C
Derate above 25擄C
Junction Temperature
Storage Temperature Range
Symbol
V
R
I
F
P
D
T
J
T
stg
Value
30
200
225
1.8
+125
鈥?5 to +150
Unit
Vdc
mAdc
mW
mW/擄C
擄C
擄C
DEVICE MARKING
MMBV3102LT1= M4C
ELECTRICAL CHARACTERISTICS(T
A
=25擄C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(I
R
=10碌A(chǔ)dc)
Reverse Voltage Leakage Current
(V
R
=15Vdc)
Diode Capacitance Temperature Coefficient
(V
R
=4.0Vdc,f=1.0MHz)
Symbol
V
(BR)R
I
R
T
CC
Min
30
鈥?/div>
鈥?/div>
Typ
鈥?/div>
鈥?/div>
300
Max
鈥?/div>
0.1
鈥?/div>
Unit
Vdc
碌A(chǔ)dc
ppm/擄C
C
T
Diode Capacitance
V
R
=3.0Vdc,f=1.0MHz
pF
Device Type
MMBV3102LT1
Min
20
Q,Figure of Merit
V
R
=3.0Vdc
f=50MHz
C
R
,Capacitance Ratio
C
3
/ C
25
f=1.0MHz
Min
4.5
Nom
22
Max
25
Min
200
Typ
4.8
MMBV3102LT1鈥?/2
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