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FGPF120N30 Datasheet

  • FGPF120N30

  • 300V, 120A PDP IGBT

  • 7頁

  • FAIRCHILD

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FGPF120N30 300V, 120A PDP IGBT
January 2006
FGPF120N30
300V, 120A PDP IGBT
Features
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
High Current Capability
Low saturation voltage : V
CE(sat)
= 1.1 V @ I
C
= 25A
High input impedance
Fast switching
General Description
Employing Unified IGBT Technology, Fairchild's PWD series of
IGBTs provides low conduction and switching loss. The PWD
series offers the optimum solution for PDP applications where
low condution loss is essential.
Application
PDP SYSTEM
C
TO-220F
1.Gate 2.Collector 3.Emitter
G
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C
I
C_pulse (1)
P
D
T
J
T
stg
T
L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Pulse Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8鈥?from case for 5 seconds
FGPF120N30
300
鹵
20
120
180 *
60
24
-55 to +150
-55 to +150
300
Units
V
V
A
A
W
W
擄C
擄C
擄C
@ T
C
= 25擄C
@ T
C
= 25擄C
@ T
C
= 25擄C
@ T
C
= 100擄C
Thermal Characteristics
Symbol
R
胃JC
(IGBT)
R
胃JA
Notes
(1) Repetitive test , pulse width=100usec , Duty=0.5
* Ic_pulse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
2.1
62.5
Units
擄C/W
擄C/W
漏2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGPF120N30 Rev. A

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