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2SJ583LS Datasheet

  • 2SJ583LS

  • P-Channel Silicon MOSFET

  • Sanyo

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Ordering number:ENN6409
P-Channel Silicon MOSFET
2SJ583LS
Ultrahigh-Speed Switching Applications
Features
路 Low ON-resistance.
路 Ultrahigh-speed switching.
路 Micaless package facilitating mounting.
Package Dimensions
unit:mm
2078B
[2SJ583LS]
10.0
3.5
7.2
4.5
2.8
3.2
16.1
16.0
0.9
1.2
14.0
3.6
0.75
1
2 3
2.4
0.7
Specifications
Absolute Maximum Ratings
at Ta = 25藲C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW鈮?0碌s, duty cycle鈮?%
Tc=25擄C
2.55
2.55
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS
Conditions
0.6
Ratings
鈥?50
鹵30
鈥?.5
鈥?4
2.0
20
150
鈥?5 to +150
Unit
V
V
A
A
W
W
藲C
藲C
Electrical Characteristics
at Ta = 25藲C
Parameter
Drain-to-Source Breakdown Voltage
Gate-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Symbol
V(BR)DSS
V(BR)GSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
ID=鈥?mA, VGS=0
IG=鹵100碌A(chǔ), VDS=0
VDS=鈥?50V, VGS=0
VGS=鹵25V, VDS=0
VDS=鈥?0V, ID=鈥?mA
VDS=鈥?0V, ID=鈥?A
ID=鈥?A, VGS=鈥?0V
鈥?.5
1.2
2.0
1.2
1.5
Conditions
Ratings
min
鈥?50
鹵30
鈥?00
鹵10
鈥?.0
typ
max
Unit
V
V
碌A(chǔ)
碌A(chǔ)
V
S
鈩?/div>
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft鈥檚
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80300TS (KOTO) TA-2754 No.6409鈥?/4

2SJ583LS相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    LOW FREQUENCY POWER AMPLIFIER
    HITACHI
  • 英文版
    LOW FREQUENCY POWER AMPLIFIER
    HITACHI [H...
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 180V V(BR)DSS | 8A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 200V V(BR)DSS | 8A I(D) | ...
    ETC
  • 英文版
    Ultrahigh-Speed Switching Applications
    SANYO
  • 英文版
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    SANYO [San...
  • 英文版
    Ultrahigh-Speed Switching Applications
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  • 英文版
    Silicon P Channel MOS FET High Speed Power Switching
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  • 英文版
    Silicon P Channel MOS FET High Speed Power Switching
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  • 英文版
    Silicon P Channel MOS FET High Speed Power Switching
    HITACHI [H...
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    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOP...
    TOSHIBA
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOP...
    TOSHIBA [T...
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOP...
    TOSHIBA
  • 英文版
    P CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING, CHOP...
    TOSHIBA [T...

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