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2SC3356 Datasheet

  • 2SC3356

  • 2SC3356

  • 102.57KB

  • 8頁

  • NEC   NEC

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DATA SHEET
DATA SHEET
SILICON TRANSISTOR
2SC3356
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low
noise amplifier at VHF, UHF and CATV band.
It has dynamic range and good current characteristic.
0.4
鈭?.05
+0.1
PACKAGE DIMENSIONS
(Units: mm)
2.8鹵0.2
1.5
0.65
鈭?.15
+0.1
FEATURES
鈥?Low Noise and High Gain
0.95
0.95
2.9鹵0.2
NF = 1.1 dB TYP., G
a
= 11 dB TYP. @V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz
鈥?High Power Gain
MAG = 13 dB TYP. @V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25

C)
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg

65
20
12
3.0
100
200
150
to +150
V
V
V
mA
mW

C

C
0.3
Marking
1.1 to 1.4
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (T
A
= 25

C)
CHARACTERISTIC
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Feed-Back Capacitance
Insertion Power Gain
Noise Figure
SYMBOL
I
CBO
I
EBO
h
FE
*
f
T
C
re
**
50
120
7
0.55
11.5
1.1
2.0
1.0
MIN.
TYP.
MAX.
1.0
1.0
300
GHz
pF
dB
dB
UNIT
TEST CONDITIONS
V
CB
= 10 V, I
E
= 0
V
EB
= 1.0 V, I
C
= 0
V
CE
= 10 V, I
C
= 20 mA
V
CE
= 10 V, I
C
= 20 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CE
= 10 V, I
C
= 20 mA, f = 1.0 GHz
V
CE
= 10 V, I
C
= 7 mA, f = 1.0 GHz

A

A

S
21
e

2
NF
*
Pulse Measurement PW

350

s, Duty Cycle

2 %
** The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
h
FE
Classification
Class
Marking
h
FE
R23/Q *
R23
50 to 100
R24/R *
R24
80 to 160
R25/S *
R25
125 to 250
* Old Specification / New Specification
Document No. P10356EJ5V1DS00 (5th edition)
Date Published March 1997 N
Printed in Japan
0 to 0.1
漏
0.16
鈭?.06
+0.1
0.4
鈭?.05
+0.1
1
3
1985

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