2N5457 / 2N5458 / 2N5459 / MMBF5457 / MMBF5458 / MMBF5459
Discrete POWER & Signal
Technologies
2N5457
2N5458
2N5459
MMBF5457
MMBF5458
MMBF5459
G
D
G
S
TO-92
D
SOT-23
Mark: 6D / 61S / 6L
S
N-Channel General Purpose Amplifier
This device is a low level audio amplifier and switching transistors,
and can be used for analog switching applications. Sourced from
Process 55.
Absolute Maximum Ratings*
Symbol
V
DG
V
GS
I
GF
T
J
, T
stg
Drain-Gate Voltage
Gate-Source Voltage
Forward Gate Current
TA = 25擄C unless otherwise noted
Parameter
Value
25
- 25
10
-55 to +150
Units
V
V
mA
擄C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
胃JC
R
胃JA
TA = 25擄C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25擄C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N5457
625
5.0
83.3
200
Max
*MMBF5457
350
2.8
357
Units
mW
mW/擄C
擄C/W
擄C/W
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
茫
1997 Fairchild Semiconductor Corporation
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